| PART |
Description |
Maker |
| GS71116AJ GS71116ATP GS71116AU |
(GS71116x) 64K x 16 1Mb Asynchronous SRAM
|
GSI Technology
|
| IDT70V658S15BC IDT70V658S15BCI IDT70V658S15BF IDT7 |
From old datasheet system
Dual N-Channel Digital FET
30V N-Channel PowerTrench MOSFET
HIGH-SPEED 3.3V 64K X 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 64K X 36 DUAL-PORT SRAM, 12 ns, PQFP208
HIGH-SPEED 3.3V 64K X 36 ASYNCHRONOUS DUAL-PORT STATIC RAM 64K X 36 DUAL-PORT SRAM, 10 ns, PQFP208
|
IDT[Integrated Device Technology]
Integrated Device Technology, Inc.
|
| N01L6183AB27I N01L6183AB27IT N01L6183AT27I N01L618 |
1Mb Ultra-Low Power Asynchronous CMOS SRAM
|
ON Semiconductor
|
| MT58L64L18F MT58L32L32F MT58L32L36F |
32K x 323.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM)
32K x 363.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出，流通式同步脉冲静态RAM)
64K x 18, 3.3V I/O, Flow-Through SyncBurst SRAM(1Mb,3.3V输入/输出,流通式同步脉冲静态RAM) 64K的18.3V的I / O的流量通过SyncBurst的SRAM兆，3.3V的输输出，流通式同步脉冲静态内存）
|
Micron Technology, Inc.
|
| N01M083WL1A |
1Mb Ultra-Low Power Asynchronous Medical CMOS SRAM 128Kx8 bit
|
NANOAMP[NanoAmp Solutions, Inc.]
|
| N01L163WC2AT2-55I N01L163WC2A N01L163WC2AB N01L163 |
1Mb Ultra-Low Power Asynchronous CMOS SRAM 1MB的超低功耗CMOS SRAM的异
From old datasheet system
|
Electronic Theatre Controls, Inc.
http://
NANOAMP[NanoAmp Solutions, Inc.]
etc
|
| MR0A16A MR2A16AYS35 MR2A16AVYS35 MR0A16AYS35 MR1A1 |
64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM 64Kx 16位的3.3V异步磁阻随机存取内存
64K x 16-Bit 3.3-V Asynchronous Magnetoresistive RAM 64K的x 16位的3.3V异步磁阻随机存取内存
|
飞思卡尔半导体(中国)有限公司
|
| 100C0347-TNC26 N01L083WC2AT2 100C0347 100C0347-BNC |
0 MHz - 400 MHz RF/MICROWAVE TRANSFER SWITCH, 0.5 dB INSERTION LOSS
1Mb Ultra-Low Power Asynchronous CMOS SRAM
|
DAICO INDUSTRIES INC
DAICO[DAICO Industries, Inc.]
NANOAMP[NanoAmp Solutions, Inc.]
http://
|
| MCM67A618B MCM67A618BFN10 MCM67A618BFN12 MCM67A618 |
64K x 18 Bit Asynchronous/ Latched Address Fast Static RAM
|
MOTOROLA[Motorola, Inc]
|
| IDT70V7288S_L 70V7288_DS_34523 IDT70V7288L15PF IDT |
64K x 16 Asynchronous Bank-Switchable Dual-Port SRAM
From old datasheet system
HIGH-SPEED 3.3V 64K x 16 BANK-SWITCHABLE DUAL-PORTED SRAM WITH EXTERNAL BANK SELECTS
|
IDT[Integrated Device Technology]
|
| GS71108SJ GS71108AJ-10 GS71108AJ-10I GS71108AJ-12I |
128K x 8 1Mb Asynchronous SRAM
CAC 5C 5#16S PIN RECP BOX
JT 15C 14#20 1#16 PIN WALL REC 128K的8最Mb异步SRAM
|
List of Unclassifed Manufacturers
GSI Technology
ETC[ETC]
N.A.
Electronic Theatre Controls, Inc.
List of Unclassifed Man...
|
| BS616LV1013 BS616LV1013EIP70 BS616LV1013AC BS616LV |
Very Low Power/Voltage CMOS SRAM 64K X 16 bit 非常低功电压CMOS SRAM4K的16
Asynchronous 1M(64Kx16) bits Static RAM
|
Brilliance Semiconducto...
BRILLIANCE SEMICONDUCTOR, Inc.
BSI[Brilliance Semiconductor]
|
